000			01636cas a2200397 a 4500
999			_c1703 _d1703
005			20180216105810.0
008			760620c19669999cau x m 0 a0eng c
022	0		_a9780123964892
040			_aB-IKIAM
041			_aENG
082	0	4	_a621.3815/2 _bS471
222		0	_aSemiconductors and semimetals
245	0	0	_aSemiconductors and semimetals. _bAxide Semiconductors _cBengr G. Svensson, Stephen J. Pearton and Chennupati Jagadish
260			_aNew York : _bAcademic Press, _c1966-
300			_avolumes : _billustrations ; _c24 cm
362	0		_aVol. 88
500			_aEdited by R.K. Willardson and Albert C. Beer, v. 1-
500			_aPublished: San Diego, <v. 53->
505			_aTheory and Modeling of oxide semiconductors - Open volume defects: Positron Annihilation spectroscopy - Bulk Growth and Impurities - Bulk Grow and impurities - Surfaces and interfaces of zinc oxide - The physics of copper oxide (Cu2O) - Transition metal-doped magnetic oxides
555			_aVols. 1 (1966)-50 (1997) issued as v. 53 (includes tables of contents).
588			_aLatest issue consulted: Vol. 86 (2012).
590			_aSERBIB/SERLOC merged record
650		0	_aSemiconductors.
650		0	_aSemimetals.
650		7	_aSemiconductors.
650		7	_aSemimetals.
650		7	_aHalbleiter
650		7	_aHalbleiterbauelement
650		7	_aHalbleiterphysik
650		7	_aHalbmetall
650		4	_aSemiconductores.
700	1		_aWillardson, Robert K.
700	1		_aBeer, Albert C.
776	0	8	_iOnline version: _tSemiconductors and semimetals _w(DLC) 2011233354 _w(OCoLC)268995604
942			_2ddc _aB-IKIAM _b16-2-2018 _cBK _zbv.