Semiconductors and semimetals. Axide Semiconductors Bengr G. Svensson, Stephen J. Pearton and Chennupati Jagadish
Tipo de material:
SeriesIdioma: ENG Detalles de publicación: New York : Academic Press, 1966-Descripción: volumes : illustrations ; 24 cmISSN: - 9780123964892
- 621.3815/2 S471
Contenidos:
Theory and Modeling of oxide semiconductors - Open volume defects: Positron Annihilation spectroscopy - Bulk Growth and Impurities - Bulk Grow and impurities - Surfaces and interfaces of zinc oxide - The physics of copper oxide (Cu2O) - Transition metal-doped magnetic oxides
| Tipo de ítem | Biblioteca actual | Signatura topográfica | Copia número | Estado | Código de barras | |
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Libros
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Biblioteca Universidad Regional Amazónica Ikiam | 621.3815/2 S471 (Navegar estantería(Abre debajo)) | Ej.1/1 | Disponible | 003442 |
Edited by R.K. Willardson and Albert C. Beer, v. 1-
Published: San Diego, <v. 53->
Theory and Modeling of oxide semiconductors - Open volume defects: Positron Annihilation spectroscopy - Bulk Growth and Impurities - Bulk Grow and impurities - Surfaces and interfaces of zinc oxide - The physics of copper oxide (Cu2O) - Transition metal-doped magnetic oxides
Vols. 1 (1966)-50 (1997) issued as v. 53 (includes tables of contents).
Latest issue consulted: Vol. 86 (2012).
SERBIB/SERLOC merged record
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